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A comparison of the diffusion of iodine into CdTe, HgCdTe and ZnCdTe

Journal of Electronic Materials, ISSN: 0361-5235, Vol: 24, Issue: 9, Page: 1225-1229
1995
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Studies on the diffusion of iodine into CdTe, mercury cadmium telluride (HgCdTe, referred to as MCT) and zinc cadmium telluride (ZnCdTe, referred to as ZCT) in the temperature range of 20 to 600°C are compared and discussed. The concentration profiles were measured using a radiotracer sectioning technique. As with the diffusion studies using the halogens into CdTe, the profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave satisfactory fits. The diffusivity for the diffusion of iodine into MCT was faster than for the diffusion into CdTe, which was faster than for the diffusion into ZCT. The high diffusivity for the fastest profile part at 20°C indicates that when iodine is diffused from the vapor into these materials, it is not a suitable long term stable dopant in devices where sharp junctions are required. © 1995 The Metallurgical of Society of AIME.

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