Analysis of ALD-processed thin films by ion-beam techniques
Analytical and Bioanalytical Chemistry, ISSN: 1618-2642, Vol: 382, Issue: 8, Page: 1791-1799
2005
- 67Citations
- 47Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations67
- Citation Indexes67
- 67
- CrossRef50
- Captures47
- Readers47
- 47
Review Description
This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators). © Springer-Verlag 2005.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=24044546522&origin=inward; http://dx.doi.org/10.1007/s00216-005-3365-3; http://www.ncbi.nlm.nih.gov/pubmed/16021420; http://link.springer.com/10.1007/s00216-005-3365-3; https://dx.doi.org/10.1007/s00216-005-3365-3; https://link.springer.com/article/10.1007/s00216-005-3365-3; http://www.springerlink.com/index/10.1007/s00216-005-3365-3; http://www.springerlink.com/index/pdf/10.1007/s00216-005-3365-3
Springer Science and Business Media LLC
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