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Relationship between low frequency dielectric dispersion and ferroelectric phase transition in pulsed-laser-deposited BiLaTi O thin film

Applied Physics A: Materials Science and Processing, ISSN: 0947-8396, Vol: 79, Issue: 8, Page: 1879-1882
2004
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Article Description

The frequency and temperature dependence of the complex dielectric constant of BiLaTiO (BLT, x = 0.9) ferroelectric thin film was studied in the frequency range of 10 ∼ 10 Hz and the temperature range of 298 ∼ 673 K. A low frequency dielectric dispersion (LFDD) was found. A model was proposed to account for this observed phenomena. The complex dielectric constant data obtained in the measured frequency and temperature ranges have been found to fit very well to the dielectric dispersion relation: ε* = ε∞ + iσ/εω + [B(iε)] /ε. The knee in the log of the electrical conductivity versus the reciprocal temperature curve occurs at T. The activation energies associated with charge conduction are E = 0.73 eV below T and E = 0.95 eV above T. The occurrence of an anomaly in both the n and ε∞ parameters near T indicates a coupling between charge carries and phonons.

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