Electrical properties of boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser ablation
Applied Physics A: Materials Science and Processing, ISSN: 1432-0630, Vol: 94, Issue: 1, Page: 105-109
2009
- 19Citations
- 31Captures
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Article Description
We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature. Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed. © 2008 Springer-Verlag.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=56349126025&origin=inward; http://dx.doi.org/10.1007/s00339-008-4893-4; http://link.springer.com/10.1007/s00339-008-4893-4; http://link.springer.com/content/pdf/10.1007/s00339-008-4893-4.pdf; http://link.springer.com/content/pdf/10.1007/s00339-008-4893-4; http://link.springer.com/article/10.1007/s00339-008-4893-4/fulltext.html; https://dx.doi.org/10.1007/s00339-008-4893-4; https://link.springer.com/article/10.1007/s00339-008-4893-4
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