InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers
Applied Physics B: Lasers and Optics, ISSN: 0946-2171, Vol: 84, Issue: 3, Page: 429-431
2006
- 12Citations
- 11Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33746840218&origin=inward; http://dx.doi.org/10.1007/s00340-006-2247-5; http://link.springer.com/10.1007/s00340-006-2247-5; http://link.springer.com/content/pdf/10.1007/s00340-006-2247-5; http://link.springer.com/content/pdf/10.1007/s00340-006-2247-5.pdf; http://link.springer.com/article/10.1007/s00340-006-2247-5/fulltext.html; https://dx.doi.org/10.1007/s00340-006-2247-5; https://link.springer.com/article/10.1007/s00340-006-2247-5; http://www.springerlink.com/index/10.1007/s00340-006-2247-5; http://www.springerlink.com/index/pdf/10.1007/s00340-006-2247-5
Springer Science and Business Media LLC
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know