Total dynamics of quartz-water system at ambient conditions
Aquatic Geochemistry, ISSN: 1380-6165, Vol: 11, Issue: 2, Page: 139-172
2005
- 9Citations
- 16Captures
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Article Description
New data on the dissolution and growth of quartz in acid, nearly neutral and slightly alkaline solutions at ambient conditions are presented. During batch dissolutions, aqueous Si-concentrations increased nonlinearly towards limit values. During parallel growth experiments, however, the high Si-concentrations corresponding to 13-fold supersaturation with respect to quartz did not decreased. To interpret these results, two dynamic models (1) a reaction model and (2) a surface-complexation model, were derived. Both models were focused on (a) reversible dissolution/growth of "bulk quartz" and b) irreversible dissolution of "disturbed quartz" (weakly bounded Si-atoms) on "new surface". Based on the reaction model, the differential rate law, dn/dt = (p+r/a) + (u - p - r/a) n/∑n - 1/V (q + s/a) n, was derived, where dn/dt is the overall Si-flux into solution [mol s], a is H ion activity, n is the instantaneous content of disturbed quartz (weakly bounded Si-atoms onto quartz surface) [mol], ∑ n is the total content of Si-atoms on quartz surface [mol], V is the volume of solution [L], and n is the content of silicic acid in solution. The rate law parameters are p = k{A}a, q = -k{A}γ, r = k K {A}a, s = -k K{A} γ, and u = k{A}a, where k and k are the rate constants for the dissolution and growth of bulk quartz in pure water, and k and k are the rate constants for the reaction of bulk quartz with hydroxyls. k is the rate constant for the dissolution of disturbed quartz. K and K are the dissociation constants of silicic acid and water, respectively. {A} is surface area [m], a is water activity, and γ is activity coefficient of silicic acid. The values of the rate constant were determined as follows: k=(3.0 ±1.0) × 10, k < 1.62 × 10, k=(1.41 ± 0.09) × 10, k=(5.26 ± 0.62) × 10, and k=(1.71 ± 0.38) × 10, all in the units of mol m s. In the acid, neutral, and alkaline solutions, respectively, the initial contents of disturbed quartz, n, were found to be (3.42 ± 0.53) × 10, (2.63 ± 0.53) × 10, and (3.94 ± 0.50) × 10 mol per 1.66 mol (i.e., 100 g) of quartz samples (grain fraction of 71-150 μ m in diameter). It relates to 23, 18, and 27 of total surface area (11 m): Ba sed on the surface-complexation model, the alternative differential rate law, dn/dt={A}(ka n/n + ka θ + ka θ + + Kaθ + Kaθ - ∑ k γ n/V), was derived, where {A} is total surface area [m], a is water activity, n is the content of single bounded surface complex, -Si(OH) [mol], n is the total Si on quartz surface [mol], ν is a stoichiometric coefficient (2 or 3), γ is activity coefficient of silicic acid, and V is the volume of solution [L]. k is dissolution rate constants and θ is molar fraction of ith surface complex. The indexes and denote single bounded complex, -Si-(OH), uncharged complex, >Si-OH, negatively charged complex, >Si-O, sodium complex, >Si-ONa, and positively charged complex, >Si-OH, respectively. ∑k is the sum of the rate constants for growth, k + k + k + k. The values of the rate constants were determined as follow: k=(1.79 ± 0.17) × 10, k < 5.8 × 10, k=(1.74 ± 0.06) × 10, k=(2.45 ± 0.09) × 10, k=(7.23 ± 0.87) × 10, and ∑k < 2.3 × 10, all in the unit of mol m s. The initial contents of disturbed quartz (as a single bounded complex -Si(OH), n), were found to be (3.20 ± 0.20) × 10, (2.30 ± 0.20) × 10, and (3.65 ± 0.15) × 10 mol on 1.66 mol of quartz samples in the acid, neutral, and alkaline solutions, respectively. © Springer 2005.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=19644386731&origin=inward; http://dx.doi.org/10.1007/s10498-004-2880-8; http://link.springer.com/10.1007/s10498-004-2880-8; http://link.springer.com/content/pdf/10.1007/s10498-004-2880-8; http://link.springer.com/content/pdf/10.1007/s10498-004-2880-8.pdf; http://link.springer.com/article/10.1007/s10498-004-2880-8/fulltext.html; http://www.springerlink.com/index/10.1007/s10498-004-2880-8; http://www.springerlink.com/index/pdf/10.1007/s10498-004-2880-8; https://dx.doi.org/10.1007/s10498-004-2880-8; https://link.springer.com/article/10.1007/s10498-004-2880-8
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