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Temperature dependence photo-luminescence of Nd doped PLZT ceramic

Journal of Electroceramics, ISSN: 1385-3449, Vol: 25, Issue: 1, Page: 89-92
2010
  • 8
    Citations
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  • 10
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    8
    • Citation Indexes
      8
  • Captures
    10

Article Description

Temperature dependence of photo-luminescence for Nd doped PLZT(9/65/35) was measured across its structural phase transition temperature. The absorption corresponding to I→ F, H energy level near 808 nm was used for exciting the sample. The major emission bands at 0.9, 1.06, and 1.34 μm were observed. No shift in the peak position of these emission bands was observed across the diffused structural transition with increase in temperature. However, a 10% increase in FWHM was observed. The absence of any discernible peak shift is attributed to the shielding of the intra-configurational 4f-4f transitions, in trivalent Nd ions, by external 5 s and 5d orbitals. The red shifted phonon side bands appeared with increase in temperature. © 2009 Springer Science+Business Media, LLC.

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