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Kinetics of current in glass-ceramics on the base of vanadium dioxide

Journal of Electroceramics, ISSN: 1573-8663, Vol: 43, Issue: 1-4, Page: 34-40
2019
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Article Description

The kinetics of current at switching of the VO based glass-ceramics samples from a state with high resistance (the off-state) to a state with low resistance (the on-state) and vice versa was studied. The delay of the transition from off-state to on-state, when a switching voltage U is applied to a sample, is related to the time t required to heat a sample to the metal-semiconductor phase transition temperature in VO. The delay time t decreases with the increase of U. It is shown that the calculated dependence of t on the voltage U, obtained with the simplified heat balance equation of a sample and the “critical temperature” model, is in good conformity with the experimental data. It was found that the delay of reverse transition from the on-state to the off-state controls the conductive channel, within which the crystallites of VO are in the metallic phase. The delay time t of this transition determines the time during which, after turning off the voltage U, a conductive channel exists in a sample. The value of t increases with the increase of U. The reason for this behavior is the expansion of conductive channel with the increase of U. As a consequence, takes place the increasing number of VO crystallites in the metallic phase. Therefore, t increases due to an increase in the time required for dissipation of the heat released during the transition of the VO crystallites from the metallic phase to the semiconducting phase.

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