Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors
Journal of Materials Science, ISSN: 1573-4803, Vol: 54, Issue: 13, Page: 9632-9642
2019
- 56Citations
- 34Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Boron and nitrogen co-doped reduced graphene oxide (BN-rGO) materials were prepared via a facile dielectric barrier discharge plasma treatment method. X-ray photoelectron spectroscopy results demonstrated that the boron content in the boron-doped rGO (B-rGO) and BN-rGO is 1.21 at. % and 1.41 at. %, while the nitrogen content in the nitrogen-doped rGO (N-rGO) and BN-rGO is 2.12 at. % and 2.69 at. %, respectively. The doping of heteroatoms significantly improves the capacitance of the as-synthesized materials, giving BN-rGO a highly enhanced capacitance of 350 F g at a current density of 0.5 A g, which is 2.36, 1.46 and 1.21 times higher than that of rGO, B-rGO or N-rGO, respectively.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85064156475&origin=inward; http://dx.doi.org/10.1007/s10853-019-03552-2; http://link.springer.com/10.1007/s10853-019-03552-2; http://link.springer.com/content/pdf/10.1007/s10853-019-03552-2.pdf; http://link.springer.com/article/10.1007/s10853-019-03552-2/fulltext.html; https://dx.doi.org/10.1007/s10853-019-03552-2; https://link.springer.com/article/10.1007/s10853-019-03552-2
Springer Science and Business Media LLC
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