PlumX Metrics
Embed PlumX Metrics

Thickness-dependent ferroelectric properties of HfO/ZrO nanolaminates using atomic layer deposition

Journal of Materials Science, ISSN: 1573-4803, Vol: 56, Issue: 10, Page: 6064-6072
2021
  • 27
    Citations
  • 0
    Usage
  • 18
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

Article Description

Ferroelectric nanolaminates have drawn wide attention due to the process convenience of atomic layer deposition (ALD) method and their superior performance. In this work, HfO/ZrO nanolaminates were prepared by alternately depositing HfO and ZrO single layer with ALD technology. The crystal structures and electrical properties were comprehensively investigated and analyzed. Compared with HfZrO solid solution, HfO/ZrO nanolaminates showed much lower leakage current density and similar ferroelectricity, which was beneficial for the improvement of device life. The highest remnant polarization of 17.7 μC cm was achieved in HfO/ZrO nanolaminates with a ratio of 12:12, exhibiting a good endurance of exceeding 5 × 10 cycles. The effects of film thickness and laminated structure on the electrical properties and fatigue performance were also discussed. The differences in ferroelectricity and leakage current were originated from the different grain sizes. The small roughness, fine grains and enough crystallization are essential for the better ferroelectric properties. This work provides a comparison between doped films and laminated films and reveals the thickness dependence on the ferroelectric properties of HfO/ZrO nanolaminates.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know