Preparation and ferroelectric properties of predominantly (100)-oriented SrBi Ti O ferroelectric thin film on Pt(111)/TiO /SiO /Si(100) substrate
Journal of Materials Science: Materials in Electronics, ISSN: 0957-4522, Vol: 20, Issue: 2, Page: 113-116
2009
- 2Citations
- 5Captures
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Article Description
A predominantly (100)-oriented SrBi Ti O (SBTi) ferroelectric thin film (orientation factor f = 68%) was formed on Pt(111)/TiO /SiO /Si(100) substrate using a metal organic decomposition process combined with a sequential layer annealing method. The film exhibits a well saturated hysteresis loop with a remanent polarization of 25 μC/cm . Furthermore, the coercive field (E ) is as low as 80 kV/cm. The values of the dielectric constant (Ε ) and dissipation factor (tan δ) at 100 kHz are estimated to be 380 and 0.08, respectively. 15% loss of P was observed after 10 switching cycles in the predominantly (100)-oriented SBTi film. The growth mode of the predominantly (100)-oriented SBTi film is discussed based on the sequential layer annealing process and the anisotropic structure of SBTi. © Springer Science+Business Media, LLC 2008.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=58249084754&origin=inward; http://dx.doi.org/10.1007/s10854-008-9636-y; http://link.springer.com/10.1007/s10854-008-9636-y; http://link.springer.com/content/pdf/10.1007/s10854-008-9636-y; http://link.springer.com/content/pdf/10.1007/s10854-008-9636-y.pdf; http://link.springer.com/article/10.1007/s10854-008-9636-y/fulltext.html; https://dx.doi.org/10.1007/s10854-008-9636-y; https://link.springer.com/article/10.1007/s10854-008-9636-y; http://www.springerlink.com/index/10.1007/s10854-008-9636-y; http://www.springerlink.com/index/pdf/10.1007/s10854-008-9636-y
Springer Science and Business Media LLC
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