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Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Journal of Materials Science: Materials in Electronics, ISSN: 1573-482X, Vol: 25, Issue: 8, Page: 3301-3307
2014
  • 20
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    20
    • Citation Indexes
      20
  • Captures
    4

Article Description

The ZnO-based linear resistance ceramics doped with rare-earth oxides (YO, LaO) have been prepared by the conventional ceramics method. The effect of the different doping amounts of rare-earth oxides on the microstructure, electrical properties and aging behavior were investigated in detail. The electrical properties analysis shows that the LaO addition on ZnO-based linear resistance ceramics has more obviously influence than the addition of YO . The samples with the LaO content of 0.25 mol% sintered at 1,320 °C exhibits excellent electrical properties with the resistivity of 253.5 Ω cm and the resistance temperature coefficient of 3.62 × 10/ °C, which are improved by 60 and 90 %, respectively. The nonlinear coefficient of voltage decreases to 1.16, decreases by 4.3 % and the stability of -1.2 % in the variation rate of the resistivity for aging temperature. © 2014 Springer Science+Business Media New York.

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