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Lattice distortion and electrical properties of x(NaK)NbO–(1 − x)BaTiO dielectrics

Journal of Materials Science: Materials in Electronics, ISSN: 1573-482X, Vol: 27, Issue: 3, Page: 2315-2320
2016
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Dielectric and insulating properties of x(NaK)NbO–(1 − x)BaTiO (NKN-BT) with an NKN content between 0.00 ≤ x ≤ 0.10 have been investigated through structural and carrier transfer analysis. Within the specimens that have less than x = 0.10 in the second phase, improved electrical properties were manifested through the increasing NKN content, and microstructural homogenization and refinement of grain size were observed. The dielectric constant was about 94 % higher in the specimen with x = 0.06, and the insulation resistance had a maximum as 1.896 × 10 Ω in the specimen with x = 0.08. It is proposed that an oxygen vacancy generated at the A-site and leading the degradation of insulation resistance decreased, due to the compensation for the conduction electron generated at the B-site. Also, according to the NKN content, lattice parameter changed with decreasing the tetragonality (c/a). Through the data of Ti K-edge extended X-ray absorption fine structure, the distortion of the crystal structure was revealed and local strain and TiO octahedra distortion by off-center displacement of Ti accompanied this finding, due to the substitution of aliovalent cations in the lattice. These decreased the mobility of oxygen vacancies, which led to improved temperature stability and insulation resistance.

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