Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime
Journal of Materials Science: Materials in Electronics, ISSN: 1573-482X, Vol: 31, Issue: 8, Page: 6255-6262
2020
- 6Citations
- 5Captures
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Article Description
GaAsSb epitaxial layers are grown using liquid-phase epitaxy (LPE) technique over < 100 > oriented GaAs substrates. The layers contain up to 1.84% Sb, as estimated from high-resolution X-ray diffraction (HRXRD) measurements. Detailed photoluminescence (PL) studies are made on the as-grown and high-temperature-annealed layers to reveal various electronic transitions in the materials. Excitation power-dependent PL measurements are done to investigate the origin of each of the transitions. The bandgap energy, obtained from PL, shows a reduction of approximately 17 meV per at% increase in Sb content, which agrees well with the bandgap reduction, calculated with the band anticrossing (BAC) model. Analysis of the temperature-dependent PL data, using Bose–Einstein model, indicates that both the electron–phonon interaction and the average phonon temperatures strongly depend on the Sb content in GaAsSb.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85081583134&origin=inward; http://dx.doi.org/10.1007/s10854-020-03180-6; http://link.springer.com/10.1007/s10854-020-03180-6; http://link.springer.com/content/pdf/10.1007/s10854-020-03180-6.pdf; http://link.springer.com/article/10.1007/s10854-020-03180-6/fulltext.html; https://dx.doi.org/10.1007/s10854-020-03180-6; https://link.springer.com/article/10.1007/s10854-020-03180-6
Springer Science and Business Media LLC
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