Electrical characteristics of AlO/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode
Journal of Materials Science: Materials in Electronics, ISSN: 1573-482X, Vol: 33, Issue: 36, Page: 26954-26965
2022
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Article Description
The temperature dependence of the electrical parameters of the Au/α-AlO/p-Si/Al heterojunction diode and the variation of these parameters with radiation were investigated. It has been determined that the lnI–V curves of the diode have non-linear plots and this is due to the inhomogeneity in the potential barrier. The ideality factor (n), barrier height (Φ) and series resistance (R) values of the diode were calculated depending on the temperature. It was determined that n and R values decrease and Φ values increase with the increase in temperature. The voltage coefficients and standard deviation values are calculated using the [(1/n) − 1] − 1/2kT and Φ − 1/2kT graphs of heterojunction diode. The value of Richardson constant was calculated as A = 7.64 A/K cm using conventional Richardson plot of ln(I/T) against 1/T. In addition, the effects of different X-ray irradiation doses on the I–V characteristics of Au/AlO/p-Si/Al heterojunction were examined.
Bibliographic Details
Springer Science and Business Media LLC
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