Deposition of Alumina Films on Si (1 0 0) Substrate Using a Low Energy Dense Plasma Focus Device

A 1.5 kJ pulsed low energy Mather type plasma focus (PF) is used to deposit thin films of alumina (α-AlO) on Si (1 0 0) substrates. The PF device with its anode made of aluminum was operated with argon-oxygen mixture as the filling gas. The AlO thin film samples were prepared using 10, 20 and 30 successive shots with substrates placed at 60 mm from the top of the anode at approximately zero angular position with respect to the anode axis. The crystallography of the as-deposited and annealed samples was studied by X-ray diffractometry (XRD). Raman Spectroscopy studies verified the formation of α-AlO phase in the annealed films. Scanning electron micrographs (SEM) of the annealed films present many different sized particulates (50–300 nm) distributed upon the film surface. The cross-sectional SEM micrographs show that the thickness of deposited alumina film is linear with a typical rate of 45 nm/shot at focus storage energy of 850 J.