Transport anisotropy and impurity scattering in ge at millikelvin temperatures: Experimental study
Journal of Low Temperature Physics, ISSN: 1573-7357, Vol: 167, Issue: 5-6, Page: 1137-1142
2012
- 7Citations
- 5Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Anisotropy effects in hot carrier transport have been investigated in germanium crystals at mK temperatures in the electric field range pertaining to the operation of the Edelweiss dark matter detectors. Comparative measurements have been made on n-type specimens of different impurity contents, both ultra-pure (N - N < 10 cm-3) and doped to 10 cm. At relatively high field intensities (≳ 5 V/cm), similar features of electron and hole transport are observed independent of the concentration of electrically active impurities. Differences appear at lower field (down to a fraction of a V/cm) with regard to electron straggling especially, dependent on crystal purity. These experiments demonstrate the importance on carrier transport of impurity scattering at low field, whereas phonon scattering becomes the dominant factor at higher field intensities. © Springer Science+Business Media, LLC 2012.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84905105946&origin=inward; http://dx.doi.org/10.1007/s10909-012-0548-0; http://link.springer.com/10.1007/s10909-012-0548-0; http://link.springer.com/content/pdf/10.1007/s10909-012-0548-0; http://link.springer.com/content/pdf/10.1007/s10909-012-0548-0.pdf; http://link.springer.com/article/10.1007/s10909-012-0548-0/fulltext.html; http://www.springerlink.com/index/10.1007/s10909-012-0548-0; http://www.springerlink.com/index/pdf/10.1007/s10909-012-0548-0; https://dx.doi.org/10.1007/s10909-012-0548-0; https://link.springer.com/article/10.1007/s10909-012-0548-0
Springer Science and Business Media LLC
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know