Ge surface passivation by GeO fabricated by NO plasma oxidation
Science China Information Sciences, ISSN: 1869-1919, Vol: 58, Issue: 4, Page: 1-5
2015
- 4Citations
- 6Captures
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Metrics Details
- Citations4
- Citation Indexes4
- CrossRef3
- Captures6
- Readers6
Article Description
In this paper, Ge surface passivation by GeO grown by NO plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO can be achieved by NO plasma oxidation at 350°C. The transmission electron microscope observation reveals that the GeO/Ge interface is automatically smooth and the thickness of GeO is ∼0.9 nm with 120 s NO plasma oxidation. The interface state density of Ge surface after NO plasma passivation is about ∼ 3×10 cmeV. WithGeO passivation, the hysteresis of MOS capacitor with AlO as gate dielectric is reduced to ∼55 mV, compared to 130 mV of the untreated one. The Fermi-level at GeO/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84924787285&origin=inward; http://dx.doi.org/10.1007/s11432-014-5180-y; http://link.springer.com/10.1007/s11432-014-5180-y; http://link.springer.com/content/pdf/10.1007/s11432-014-5180-y; http://link.springer.com/content/pdf/10.1007/s11432-014-5180-y.pdf; http://link.springer.com/article/10.1007/s11432-014-5180-y/fulltext.html; https://dx.doi.org/10.1007/s11432-014-5180-y; https://link.springer.com/article/10.1007/s11432-014-5180-y; http://sciencechina.cn/gw.jsp?action=cited_outline.jsp&type=1&id=5621546&internal_id=5621546&from=elsevier
Springer Science and Business Media LLC
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