Nucleation of ZnTe/CdTe epitaxy on high-Miller-index Si surfaces
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 32, Issue: 7, Page: 717-722
2003
- 28Citations
- 14Captures
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Conference Paper Description
Tellurium-adsorption studies were conducted on {111}-type Si surfaces that are off-cut from the {111} in the range of 0-30° on both nonpassivated- and arsenicpassivated Si surfaces. Relative surface coverages as a function of Te exposure time and Si-surface orientation were obtained with in-situ x-ray photoelectron spectroscopy (XPS). The XPS results indicate that Te coverage on arsenic-passivated Si surfaces increases as the step density of the surface increases. In contrast, Te-adsorption studies conducted on nonpassivated-Si surfaces showed no dependence between Te coverage and the surface-step density. Subsequent ZnTe and CdTe molecular-beam epitaxial growth on these high-Miller-index Si surfaces further validate a step-edge nucleation model. Additionally, it was observed that the CdTe-epilayer orientation did not always reproduce the Si-substrate orientation and was a function of both the initial Si surface and the growth conditions used.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0042768018&origin=inward; http://dx.doi.org/10.1007/s11664-003-0058-6; http://link.springer.com/10.1007/s11664-003-0058-6; http://link.springer.com/content/pdf/10.1007/s11664-003-0058-6; http://link.springer.com/content/pdf/10.1007/s11664-003-0058-6.pdf; http://link.springer.com/article/10.1007/s11664-003-0058-6/fulltext.html; https://dx.doi.org/10.1007/s11664-003-0058-6; https://link.springer.com/article/10.1007/s11664-003-0058-6; http://www.springerlink.com/index/10.1007/s11664-003-0058-6; http://www.springerlink.com/index/pdf/10.1007/s11664-003-0058-6
Springer Science and Business Media LLC
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