Analysis of dislocation density in Pb Sn se grown on znTe/Si by MBE
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 38, Issue: 11, Page: 2343-2347
2009
- 5Citations
- 4Captures
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Article Description
The growth of (211) Pb Sn Se on Si is achieved with a thick ZnTe buffer layer. The obtained films are specular, but contain widely dispersed void defects. Because the lattice misfit between Pb Sn Se and ZnTe is small, dislocation density values on the order of 10 /cm in the Pb Sn Se are obtained. The variation of the dislocation density as a function of Pb Sn Se thickness, h, is analyzed in terms of dislocation annihilation. The analysis predicts an inverse quadratic dependence of dislocation density on h, and quantitative agreement with experimental measurements of the dislocation density is obtained. © 2009 TMS.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=70349861747&origin=inward; http://dx.doi.org/10.1007/s11664-009-0907-z; http://link.springer.com/10.1007/s11664-009-0907-z; http://link.springer.com/content/pdf/10.1007/s11664-009-0907-z; http://link.springer.com/content/pdf/10.1007/s11664-009-0907-z.pdf; http://link.springer.com/article/10.1007/s11664-009-0907-z/fulltext.html; https://dx.doi.org/10.1007/s11664-009-0907-z; https://link.springer.com/article/10.1007/s11664-009-0907-z; http://www.springerlink.com/index/10.1007/s11664-009-0907-z; http://www.springerlink.com/index/pdf/10.1007/s11664-009-0907-z
Springer Science and Business Media LLC
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