Accurate simulation of temperature-dependent dark current in hgcdte infrared detectors assisted by analytical modeling
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 39, Issue: 7, Page: 981-985
2010
- 47Citations
- 18Captures
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Conference Paper Description
Resistance-voltage curves of n+-on-p Hg Cd Te infrared photodiodes were measured in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were fitted by an improved simultaneous-mode nonlinear fitting process. Based on the extracted parameters, an efficient numerical simulation approach has been developed by inserting trap-assisted and band-to- band tunneling models into continuity equations as generation-recombination processes. Simulated dark-current characteristics were found to be in good agreement with the experimental data, demonstrating the validity of the nonlinear fitting process. Our work presents an efficient method for dark- current simulations over a wide range of temperatures and bias voltages, which is important for investigating mechanisms of carrier transport across the HgCdTe junction. © 2010 TMS.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=77954623566&origin=inward; http://dx.doi.org/10.1007/s11664-010-1121-8; http://link.springer.com/10.1007/s11664-010-1121-8; http://link.springer.com/content/pdf/10.1007/s11664-010-1121-8; http://link.springer.com/content/pdf/10.1007/s11664-010-1121-8.pdf; http://link.springer.com/article/10.1007/s11664-010-1121-8/fulltext.html; https://dx.doi.org/10.1007/s11664-010-1121-8; https://link.springer.com/article/10.1007/s11664-010-1121-8; http://www.springerlink.com/index/10.1007/s11664-010-1121-8; http://www.springerlink.com/index/pdf/10.1007/s11664-010-1121-8
Springer Science and Business Media LLC
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