Characterization and properties of nickel aluminide nanocrystals in an alumina layer for nonvolatile memory applications
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 40, Issue: 6, Page: 1345-1349
2011
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Article Description
Intermetallic nanocrystal memory devices with nickel aluminide nanocrystals in the electron-trapping layer and an alumina layer as the blocking layer were prepared on the surface of oxidized silicon substrates by sputter-coating of Ni and Al O in sequence, followed by an annealing procedure. Several aluminide nanocrystal memory devices are reported. The effect of annealing at 900°C on the memory properties was investigated. Intermetallic nanocrystals were identified by high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy as Ni Al with sizes of 15-20 nm. The results showed that a sixfold increase (0.37 V to 2.34 V) in the memory window could be achieved after annealing for the optimal time of 3 min. © 2011 TMS.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79955911849&origin=inward; http://dx.doi.org/10.1007/s11664-011-1576-2; http://link.springer.com/10.1007/s11664-011-1576-2; http://link.springer.com/content/pdf/10.1007/s11664-011-1576-2; http://link.springer.com/content/pdf/10.1007/s11664-011-1576-2.pdf; http://link.springer.com/article/10.1007/s11664-011-1576-2/fulltext.html; http://www.springerlink.com/index/10.1007/s11664-011-1576-2; http://www.springerlink.com/index/pdf/10.1007/s11664-011-1576-2; https://dx.doi.org/10.1007/s11664-011-1576-2; https://link.springer.com/article/10.1007/s11664-011-1576-2
Springer Science and Business Media LLC
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