Influence of substrate temperature on structural properties and deposition rate of AlN thin film deposited by reactive magnetron sputtering
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 41, Issue: 7, Page: 1948-1954
2012
- 47Citations
- 54Captures
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Article Description
Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R ) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k ) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively. © 2012 TMS.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84862788397&origin=inward; http://dx.doi.org/10.1007/s11664-012-1999-4; http://link.springer.com/10.1007/s11664-012-1999-4; http://link.springer.com/content/pdf/10.1007/s11664-012-1999-4; http://link.springer.com/content/pdf/10.1007/s11664-012-1999-4.pdf; http://link.springer.com/article/10.1007/s11664-012-1999-4/fulltext.html; http://www.springerlink.com/index/10.1007/s11664-012-1999-4; http://www.springerlink.com/index/pdf/10.1007/s11664-012-1999-4; https://dx.doi.org/10.1007/s11664-012-1999-4; https://link.springer.com/article/10.1007/s11664-012-1999-4
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