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Influence of substrate temperature on structural properties and deposition rate of AlN thin film deposited by reactive magnetron sputtering

Journal of Electronic Materials, ISSN: 0361-5235, Vol: 41, Issue: 7, Page: 1948-1954
2012
  • 47
    Citations
  • 0
    Usage
  • 54
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    47
    • Citation Indexes
      47
  • Captures
    54

Article Description

Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness (R ) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient (k ) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively. © 2012 TMS.

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