Comparison of microwave dielectric properties of BaSr TiO thin films grown on (100) LaAlO and (100) MgO single-crystal substrates
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 42, Issue: 6, Page: 988-992
2013
- 7Citations
- 5Captures
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Article Description
The microwave properties of barium strontium titanate (Ba SrTiO) thin films grown on (100) LaAlO (LAO) and (100) MgO single-crystal substrates through the sol-gel technique were investigated. The interdigital capacitor (IDC) technique was used to measure the nonlinear dielectric properties in the frequency range from 1 GHz to 10 GHz. The results show that the Curie temperature, capacitance, and tunability of the films are strongly dependent upon the substrate. The film fabricated on the LaAlO substrate has a higher tunability of 16.77% than that grown on the MgO substrate (∼8.38%), measured at 10 GHz with an applied voltage of 35 V. The loss tangent is a linear function of the frequency in the microwave range, and the film grown on the MgO substrate has a lower loss tangent than that grown on the LAO substrate. This work reveals the great potential of BaSrTiO (BST) films for application in tunable microwave devices. © 2013 TMS.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84877780367&origin=inward; http://dx.doi.org/10.1007/s11664-013-2489-z; http://link.springer.com/10.1007/s11664-013-2489-z; http://link.springer.com/content/pdf/10.1007/s11664-013-2489-z; http://link.springer.com/content/pdf/10.1007/s11664-013-2489-z.pdf; http://link.springer.com/article/10.1007/s11664-013-2489-z/fulltext.html; https://dx.doi.org/10.1007/s11664-013-2489-z; https://link.springer.com/article/10.1007/s11664-013-2489-z
Springer Science and Business Media LLC
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