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Electrical conductivity of VO-TeO-Sb glasses at low temperatures

Journal of Electronic Materials, ISSN: 0361-5235, Vol: 43, Issue: 9, Page: 3672-3680
2014
  • 17
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Metrics Details

  • Citations
    17
    • Citation Indexes
      17
  • Captures
    4

Article Description

Semiconducting glasses of the type 40TeO-(60 - x) V O-xSb were prepared by rapid melt quenching and their dc electrical conductivity was measured in the temperature range 180-296 K. For these glassy samples, the dc electrical conductivity ranged from 2.26 × 10 S cm to 1.11 × 10 S cm at 296 K, indicating the conductivity is enhanced by increasing the VO content. These experimental results could be explained on the basis of different mechanisms (based on polaron-hopping theory) in the different temperature regions. At temperatures above Θ /2 (where Θ is the Debye temperature), the non-adiabatic small polaron hopping (NASPH) model is consistent with the data, whereas at temperatures below Θ /2, a T dependence of the conductivity indicative of the variable range hopping (VRH) mechanism is dominant. For all these glasses crossover from SPH to VRH conduction was observed at a characteristic temperature T ≤ Θ/2. In this study, the hopping carrier density and carrier mobility were determined at different temperatures. N (E), the density of states at (or near) the Fermi level, was also determined from the Mott variables; the results were dependent on VO content. © 2014 TMS.

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