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Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration

Journal of Electronic Materials, ISSN: 0361-5235, Vol: 44, Issue: 8, Page: 2679-2685
2015
  • 12
    Citations
  • 0
    Usage
  • 14
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    14

Article Description

We report the device characteristics and uniformity of AlGaN/GaN MIS-HEMTs fabricated on a full 200-mm (8-in) GaN-on-Si substrate using CMOS-compatible non-Au and non-lift-off-based fabrication process. An I and g of 387 mA/mm and 82 mS/mm were, respectively, measured across a 200-mm wafer. We have observed a good uniformity of device characteristics, namely I (average 345 mA/mm; %σ of 5%), g (average of 82 mS/mm; %σ of 4.9%), R (average of 10.2 Ω mm; %σ of 8.3%) and V (average of 277 V, %σ of 17%) for AlGaN/GaN MIS-HEMTs grown on a 200-mm silicon substrate. For wafer line-yield, a very low wafer breakage (2%) was observed.

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