Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration
Journal of Electronic Materials, ISSN: 0361-5235, Vol: 44, Issue: 8, Page: 2679-2685
2015
- 12Citations
- 14Captures
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Article Description
We report the device characteristics and uniformity of AlGaN/GaN MIS-HEMTs fabricated on a full 200-mm (8-in) GaN-on-Si substrate using CMOS-compatible non-Au and non-lift-off-based fabrication process. An I and g of 387 mA/mm and 82 mS/mm were, respectively, measured across a 200-mm wafer. We have observed a good uniformity of device characteristics, namely I (average 345 mA/mm; %σ of 5%), g (average of 82 mS/mm; %σ of 4.9%), R (average of 10.2 Ω mm; %σ of 8.3%) and V (average of 277 V, %σ of 17%) for AlGaN/GaN MIS-HEMTs grown on a 200-mm silicon substrate. For wafer line-yield, a very low wafer breakage (2%) was observed.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84933679008&origin=inward; http://dx.doi.org/10.1007/s11664-015-3777-6; http://link.springer.com/10.1007/s11664-015-3777-6; http://link.springer.com/content/pdf/10.1007/s11664-015-3777-6; http://link.springer.com/content/pdf/10.1007/s11664-015-3777-6.pdf; http://link.springer.com/article/10.1007/s11664-015-3777-6/fulltext.html; https://dx.doi.org/10.1007/s11664-015-3777-6; https://link.springer.com/article/10.1007/s11664-015-3777-6
Springer Science and Business Media LLC
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