Characteristics and Fabrication of an Inverted Organic Photodiode Using CdSe Core/ZnS Shell Quantum Dots As an Electron Transport Material
Journal of Electronic Materials, ISSN: 1543-186X, Vol: 51, Issue: 5, Page: 2406-2411
2022
- 3Citations
- 6Captures
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Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
To achieve high detectivity of organic photodetectors (OPDs), we incorporated CdSe core/ZnS shell quantum dots (CdSe@ZnS) in devices consisting of ITO/tin oxide (SnO)/CdSe@ZnS/(poly(3-hexylthiophene-2,5-diyl)[P3HT]:PCBM)/MoO/Ag. We found that the CdSe@ZnS layer has a significant role in enhancing photocurrent and reducing leakage current simultaneously by transferring energy from the quantum dot buffer layer to the wide band gap of the ZnS shell. As a result, the device with the CdSe@ZnS quantum dot buffer layer shows enhancement of the photocurrent by 13.2%, reduction in the dark current from 8.28 µA/cm to 1.06 µA/cm, and detectivity of 1.43 × 10 Jones. Graphical Abstract: [Figure not available: see fulltext.]
Bibliographic Details
Springer Science and Business Media LLC
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