Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method
Journal of Electronic Materials, ISSN: 1543-186X, Vol: 52, Issue: 8, Page: 5466-5472
2023
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Article Description
The Na-flux method has great potential for growing high-quality GaN single crystals. In this study, we used a simple pre-stirring process to grow GaN crystals by the Na-flux method. The yield of GaN crystals was 95.6% and the average growth thickness was about 412 μm on a hydride vapor-phase epitaxy (HVPE)-grown GaN seed with pre-stirring. The photoluminescence (PL) spectra showed that the relative intensity of blue and yellow band luminescence peaks of liquid-phase epitaxy (LPE) of GaN crystals was reduced when pre-stirring was employed. The x-ray rocking curve (XRC) showed that the full width at half maximum (FWHM) of the (002) peak for the LPE-GaN crystal with pre-stirring was 125 arcsec, which is smaller than that without pre-stirring. Therefore, we conclude that pre-stirring may be useful for fabricating high-quality bulk GaN crystals.
Bibliographic Details
Springer Science and Business Media LLC
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