Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications
Journal of Electronic Materials, ISSN: 1543-186X, Vol: 53, Issue: 1, Page: 432-440
2024
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
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Article Description
In this work, a CuO-GO nanocomposite-based device was fabricated which exhibited excellent free bipolar resistive switching (RS) phenomena. The device showed considerable switching performance such as low operating voltages, high OFF/ON resistance ratio (~10), uniformity, good endurance, and long retention (~10 s). The RS actions of the device were explained using an electric field-induced creation and annihilation of metal filaments in the CuO-GO layer. Owing to the growing demand for flexible electronics, the mechanical strength of the fabricated device has been realized for the different bending radii of the device. The proposed device showed potential towards flexible high-density data storage devices. Also, the devices showed a good resemblance with biological synapses.
Bibliographic Details
Springer Science and Business Media LLC
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