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Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

Journal of Electronic Materials, ISSN: 0361-5235, Vol: 28, Issue: 6, Page: 630-636
1999
  • 40
    Citations
  • 0
    Usage
  • 25
    Captures
  • 0
    Mentions
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    40
    • Citation Indexes
      40
  • Captures
    25

Article Description

The carrier lifetimes in InGaAs (InGaAs) and HgCdTe (HgCdTe) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5<λ<3.7 μm. Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. The possible Auger recombination mechanisms (CHCC, CHLH, and CHSH processes) in direct-gap semiconductors are investigated. In both n-type ternary alloys, the carrier lifetimes are similar, and competition between radiative and CHCC processes take place. In p-type materials, the carrier lifetimes are also comparable, however the most effective channels of Auger mechanism are: CHSH process in InGaAs, and CHLH process in HgCdTe. Next, the performance of heterostructure p-on-n photovoltaic devices are considered. Theoretically predicted RA values are compared with experimental data reported by other authors. InGaAs photodiodes have shown the device performance within a factor often of theoretical limit. However, the performance of InGaAs photodiodes decreases rapidly at intermediate wavelengths due to mismatch-induced defects. HgCdTe photodiodes maintain high performance close to the ultimate limit over a wider range of wavelengths. In this context technology of HgCdTe is considerably advanced since the same lattice parameter of this alloy is the same over wide composition range.

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