Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Nanoscale Research Letters, ISSN: 1931-7573, Vol: 2, Issue: 6, Page: 303-307
2007
- 29Citations
- 12Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Ten-layer InAs/In Ga As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm ) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm ) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34547320507&origin=inward; http://dx.doi.org/10.1007/s11671-007-9066-4; https://link.springer.com/10.1007/s11671-007-9066-4; https://dx.doi.org/10.1007/s11671-007-9066-4; https://link.springer.com/article/10.1007/s11671-007-9066-4; http://www.springerlink.com/index/10.1007/s11671-007-9066-4; http://www.springerlink.com/index/pdf/10.1007/s11671-007-9066-4
Springer Science and Business Media LLC
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