Silicon light emitting device in CMOS technology
Optoelectronics Letters, ISSN: 1673-1905, Vol: 3, Issue: 2, Page: 85-87
2007
- 1Citations
- 2Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations1
- Citation Indexes1
- CrossRef1
- Captures2
- Readers2
Article Description
A novel silicon light emitting device was realized with standard 0.35 μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm. The optical spectrum of the device is in the range of 500-820 nm. © 2007 Tianjin University of Technology.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34547155683&origin=inward; http://dx.doi.org/10.1007/s11801-007-6123-2; https://link.springer.com/10.1007/s11801-007-6123-2; https://dx.doi.org/10.1007/s11801-007-6123-2; https://link.springer.com/article/10.1007/s11801-007-6123-2; http://www.springerlink.com/index/10.1007/s11801-007-6123-2; http://www.springerlink.com/index/pdf/10.1007/s11801-007-6123-2
Springer Science and Business Media LLC
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