An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO as the blocking layer
Optoelectronics Letters, ISSN: 1673-1905, Vol: 7, Issue: 5, Page: 330-333
2011
- 8Citations
- 4Captures
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Article Description
An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C-butyric acid methyl ester (PCBM)/MoO/Ag is studied. We find that the optimum thickness of the MoO layer is 2 nm. When the MoO blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%. The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO layer. © 2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=80053467954&origin=inward; http://dx.doi.org/10.1007/s11801-011-1061-4; http://link.springer.com/10.1007/s11801-011-1061-4; http://link.springer.com/content/pdf/10.1007/s11801-011-1061-4; http://link.springer.com/content/pdf/10.1007/s11801-011-1061-4.pdf; http://link.springer.com/article/10.1007/s11801-011-1061-4/fulltext.html; http://www.springerlink.com/index/10.1007/s11801-011-1061-4; http://www.springerlink.com/index/pdf/10.1007/s11801-011-1061-4; https://dx.doi.org/10.1007/s11801-011-1061-4; https://link.springer.com/article/10.1007/s11801-011-1061-4
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