Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films
Bulletin of Materials Science, ISSN: 0973-7669, Vol: 45, Issue: 4
2022
- 9Captures
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Metrics Details
- Captures9
- Readers9
Article Description
In this work, we report the effect of deposition pressure on the deposition of FeNbMoTaW thin films. Depositions were carried out at room temperature using DC-magnetron sputtering technique from a single target. The target was prepared in-house via high-energy mechanical milling and cold-pressing milled powders at room temperature. As-deposited films were amorphous. Films deposited at a pressure of 0.5 Pa showed a hardness of 13.05 ± 0.79 GPa. Air annealing studies reveal the transformation of amorphous FeNbMoTaW to crystalline oxide phases for temperatures exceeding 573 K. The delamination of films on annealing limits their application for temperatures greater than 573 K.
Bibliographic Details
Springer Science and Business Media LLC
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