Wavelet-XAFS investigation for Mn:Si diluted magnetic semiconductor thin films
Rendiconti Lincei, ISSN: 2037-4631, Vol: 22, Issue: SUPPL. 1, Page: 25-32
2011
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Article Description
The Morlet wavelet transformation (MT) was used to analyze Mn K-edge extended X-ray absorption fine structure (EXAFS) spectra of Mn-doped Si-based diluted magnetic semiconductor (DMS) thin films grown by the magnetron co-sputtering method. MT of EXAFS data shows that the Mn-Mn scattering path can be distinguished by the Mn-Si scattering path in the spectra of Mn Si DMS thin films. In all DMS thin films Mn atoms fill Si sites without forming Mn-Si compounds while Mn-Si compounds are present in the annealed analogues. From the analysis of experimental data we point out that low-concentration Mn-doped samples are characterized by a more symmetric structure. © 2011 Springer-Verlag.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=81855194477&origin=inward; http://dx.doi.org/10.1007/s12210-011-0146-0; http://link.springer.com/10.1007/s12210-011-0146-0; http://link.springer.com/content/pdf/10.1007/s12210-011-0146-0; http://link.springer.com/content/pdf/10.1007/s12210-011-0146-0.pdf; http://link.springer.com/article/10.1007/s12210-011-0146-0/fulltext.html; https://dx.doi.org/10.1007/s12210-011-0146-0; https://link.springer.com/article/10.1007/s12210-011-0146-0; http://www.springerlink.com/index/10.1007/s12210-011-0146-0; http://www.springerlink.com/index/pdf/10.1007/s12210-011-0146-0
Springer Science and Business Media LLC
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