Facile fabrication of all-SWNT field-effect transistors
Nano Research, ISSN: 1998-0000, Vol: 4, Issue: 6, Page: 580-588
2011
- 12Citations
- 17Usage
- 27Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations12
- Citation Indexes12
- CrossRef12
- 11
- Usage17
- Downloads17
- Captures27
- Readers27
- 27
Article Description
Field-effect transistors (FETs) have been fabricated using as-grown single-walled carbon nanotubes (SWNTs) for the channel as well as both source and drain electrodes. The underlying Si substrate was employed as the back-gate electrode. Fabrication consisted of patterned catalyst deposition by surface modification followed by dip-coating and synthesis of SWNTs by alcohol chemical vapor deposition (CVD). The electrodes and channel were grown simultaneously in one CVD process. The resulting FETs exhibited excellent performance, with an I/I ratio of 10 and a maximum ON-state current (I) exceeding 13 μA. The large I is attributed to SWNT bundles connecting the SWNT channel with the SWNT electrodes. Bundling creates a large contact area, which results in a small contact resistance despite the presence of Schottky barriers at metallic-semiconducting interfaces. The approach described here demonstrates a significant step toward the realization of metal-free electronics. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79957444064&origin=inward; http://dx.doi.org/10.1007/s12274-011-0114-0; http://link.springer.com/10.1007/s12274-011-0114-0; https://dc.tsinghuajournals.com/graphical-abstracts/1983; https://dc.tsinghuajournals.com/cgi/viewcontent.cgi?article=2982&context=graphical-abstracts; http://sciencechina.cn/gw.jsp?action=cited_outline.jsp&type=1&id=4431019&internal_id=4431019&from=elsevier; http://www.springerlink.com/index/10.1007/s12274-011-0114-0; http://www.springerlink.com/index/pdf/10.1007/s12274-011-0114-0; https://dx.doi.org/10.1007/s12274-011-0114-0; https://link.springer.com/article/10.1007/s12274-011-0114-0
Tsinghua University Press
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