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Facile fabrication of all-SWNT field-effect transistors

Nano Research, ISSN: 1998-0000, Vol: 4, Issue: 6, Page: 580-588
2011
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Article Description

Field-effect transistors (FETs) have been fabricated using as-grown single-walled carbon nanotubes (SWNTs) for the channel as well as both source and drain electrodes. The underlying Si substrate was employed as the back-gate electrode. Fabrication consisted of patterned catalyst deposition by surface modification followed by dip-coating and synthesis of SWNTs by alcohol chemical vapor deposition (CVD). The electrodes and channel were grown simultaneously in one CVD process. The resulting FETs exhibited excellent performance, with an I/I ratio of 10 and a maximum ON-state current (I) exceeding 13 μA. The large I is attributed to SWNT bundles connecting the SWNT channel with the SWNT electrodes. Bundling creates a large contact area, which results in a small contact resistance despite the presence of Schottky barriers at metallic-semiconducting interfaces. The approach described here demonstrates a significant step toward the realization of metal-free electronics. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

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