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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Nano Research, ISSN: 1998-0000, Vol: 10, Issue: 10, Page: 3295-3302
2017
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Article Description

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaO-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm), high selectivity (5 × 10), low off-state current (~10 pA), robust endurance (>10), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue. [Figure not available: see fulltext.].

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