The Strain Model for Globally Strained Silicon on Insulator Wafer Based on High-stress SiN Film Deposition
Silicon, ISSN: 1876-9918, Vol: 15, Issue: 12, Page: 5115-5120
2023
- 1Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations1
- Citation Indexes1
Article Description
In this paper, based on the straining mechanism of plastic deformation and the flexible slip properties of buried SiO layers for the sSOI wafer, a model for the introduced strain of sSOI fabricated by the deposition of high-stress SiN film is established by the arc method and mechanical relations. This model includes strains generated by both wafer bending and stretching/compression of the stress film. The model calculation results are basically consistent with the experimental results as verified by experimental data and Raman tests.
Bibliographic Details
Springer Science and Business Media LLC
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