Influence of Sn, in on ac electrical conductivity and dielectric relaxation behavior of Se–Te chalcogenide glass films

Thin films of SeTe X (= Sn, In) were synthesized by the thermal evaporation technique. Both Ac and dielectric measurements were carried out in the frequency range (10–10 Hz) and the temperature range (303–333 K). The result of ac conductivity was found to follow the power law: ((ω) = A ω with s < 1) which is interpreted with the correlated barrier hopping model (CBH). The Ac conductivity exhibited a thermally activated behavior with an activation energy reduces with temperature. Both the dielectric constant ε (ω) and the dielectric loss (ε(ω)) reduce with the frequency and rise with raising temperature over the examined ranges. Some parameters as Maximum barrier height W, hopping energy W, the localized state density N(f) and relaxation time τ are estimated and their change with Sn/In addition is discussed. Sn addition improves the conductivity of Se–Te than In addition.