Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization
Electronic Materials Letters, ISSN: 1738-8090, Vol: 9, Issue: 5, Page: 593-597
2013
- 14Citations
- 11Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
NbN films were prepared by radio frequency reactive magnetron sputtering and then employed as diffusion barriers between Cu and Si. The microstructure of the NbN films was an assembly of very small columnar crystallites with a cubic structure. To investigate the properties as diffusion barriers, we performed metallurgical reactions of Cu/NbN/Si, Cu/Nb/Si and Cu/TaN/Si for comparisons. The sheet resistance increased dramatically after annealing above 750°C for Cu/NbN/Si, and above 500°C for both Cu/Nb/Si and Cu/TaN/Si. The interfaces were deteriorated seriously and formation of CuSi was observed when the sheet resistance was significantly increased. The diffusion coefficient of Cu in NbN barrier films was estimated by using the change of resistance (ΔR /R %). Compared with TaN, NbN films possess larger grain size and lower Cu diffusion coefficient. Our results suggest that the NbN film can be used as a diffusion barrier for Cu metallization as compared to the well-known TaN film. © 2013 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84883817907&origin=inward; http://dx.doi.org/10.1007/s13391-012-2173-0; http://link.springer.com/10.1007/s13391-012-2173-0; http://link.springer.com/content/pdf/10.1007/s13391-012-2173-0; http://link.springer.com/content/pdf/10.1007/s13391-012-2173-0.pdf; http://link.springer.com/article/10.1007/s13391-012-2173-0/fulltext.html; https://dx.doi.org/10.1007/s13391-012-2173-0; https://link.springer.com/article/10.1007/s13391-012-2173-0
Springer Science and Business Media LLC
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know