Effects of pressure and deposition time on the characteristics of InSe films grown by magnetron sputtering
Electronic Materials Letters, ISSN: 2093-6788, Vol: 10, Issue: 6, Page: 1093-1101
2014
- 15Citations
- 16Captures
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Article Description
Crystalline InSe films were fabricated by magnetron sputtering from a sintered InSe-compound target and the effects of the deposition parameters, including the working pressure and deposition time, on the phase composition, structure, morphology, and optical properties were clarified. Single-phase κ-InSe was prepared at 4.0 Pa, but γ-InSe was recognized when the working pressure was lower than 4.0 Pa. The optical transmittance of the films decreased to 45% and the optical band gap varied from 2.9 to 2.0 eV with increasing film thickness from 80 to 967 nm. Metal-semiconductor-metal (MSM) photodetectors based on γ-InSe thin films with various thicknesses were also fabricated. The result of photosensitivity research on such MSM photodetectors suggests that it may be impossible to fabricate wide-absorption-range MSM devices by just using a single material (γ-InSe) because of spatial potential fluctuations in the layers.[Figure not available: see fulltext.].
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84911477940&origin=inward; http://dx.doi.org/10.1007/s13391-014-4081-y; http://link.springer.com/10.1007/s13391-014-4081-y; http://link.springer.com/content/pdf/10.1007/s13391-014-4081-y; http://link.springer.com/content/pdf/10.1007/s13391-014-4081-y.pdf; http://link.springer.com/article/10.1007/s13391-014-4081-y/fulltext.html; https://dx.doi.org/10.1007/s13391-014-4081-y; https://link.springer.com/article/10.1007/s13391-014-4081-y
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