PlumX Metrics
Embed PlumX Metrics

Enhanced Hall Mobility and d Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD

Electronic Materials Letters, ISSN: 2093-6788, Vol: 20, Issue: 2, Page: 111-121
2024
  • 0
    Citations
  • 0
    Usage
  • 6
    Captures
  • 1
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Captures
    6
  • Mentions
    1
    • News Mentions
      1
      • News
        1

Most Recent News

Studies from Bandung Institute of Technology Yield New Data on Zinc Oxide Nanotechnology [Enhanced Hall Mobility and D(0) Ferromagnetism In Li-doped Zno Thin Films Prepared By Aerosol-assisted Cvd]

2023 JUN 08 (NewsRx) -- By a News Reporter-Staff News Editor at Nanotech Daily -- Current study results on Nanotechnology - Zinc Oxide Nanotechnology have

Article Description

Zinc oxide (ZnO) thin films with different concentrations of lithium, from 0 to 15 mol%, have been grown on Si(100) substrates by employing aerosol-assisted chemical vapor deposition (AACVD). The structural, electronic, and magnetic properties of the ZnO thin films were investigated as the effect of Li doping concentration. SEM images of surface morphology reveal that the undoped and low-concentration Li-doped ZnO thin films exhibit irregular ellipsoid grains. In comparison, the ZnO thin films with higher Li concentration consist of multi-aligned rod-like and hexagonal-shaped grains. XRD pattern analysis confirms that all grown ZnO thin films exhibit a single polycrystalline phase of hexagonal wurtzite crystal. The lattice reduction was observed in the Li-doped thin films indicating that the substitutional Li effectively occupied the Zn lattice site. The Hall effect measurement demonstrates that Li-doped ZnO films possess p-type conductivity. The resistivity of Li-doped ZnO thin films decreases with an increase in Li doping concentration while the hole carrier density increases. The Hall mobility tends to increase as more Li doping concentration is given, with the highest Hall mobility obtained from 15 mol% Li-doped film with a value of 85.88 cm/V s. The VSM study demonstrates that all grown ZnO thin films exhibit an M-H hysteresis curve, indicating d ferromagnetism behavior at room temperature, with coercivity ranging from 202 to 373 Oe. The highest saturation magnetization was obtained from 10 mol% Li-doped films, with a value of 5.55 × 10 emu/g. Graphical Abstract: (Figure presented.).

Bibliographic Details

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know