Controllable Vapor Growth of Large-Area Aligned CdSSe Nanowires for Visible Range Integratable Photodetectors

Abstract: The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdSSe nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdSSe NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdSSe NWs possess smooth surface and uniform diameter. The aligned CdSSe NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdSSe NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.