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InP based optoelectronics

Journal of Crystal Growth, ISSN: 0022-0248, Vol: 107, Issue: 1, Page: 806-821
1991
  • 20
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    20
    • Citation Indexes
      20
  • Captures
    4

Article Description

Optoelectronic devices involving epitaxial layers grown by MOCVD within the GaInAsP and GaInAlAs material systems lattice matched to InP are reviewed. Besides discrete long wavelength (1 < λ < 1.7 μm) emitters and detectors the development of optoelectronic integrated circuits is discussed. The reliability of the established devices (laser, PIN diode, APD) as well as the implications which future devices will have on the MOCVD technique are presented.

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