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Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures

Journal of Crystal Growth, ISSN: 0022-0248, Vol: 166, Issue: 1, Page: 309-313
1996
  • 11
    Citations
  • 0
    Usage
  • 2
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    2

Article Description

(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III–V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.

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