Trends in semiconductor memories
Microelectronics Journal, ISSN: 1879-2391, Vol: 20, Issue: 1, Page: 9-58
1989
- 18Citations
- 12Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
An overview is given of the state-of-the-art of the different semiconductor memory types and the trends in their future developments are discussed. The paper treats the physical operation principles, the evolution in technology and device concepts and the new developments and trends for each class of memory devices comprising SRAM (static random-access memories), DRAM (dynamic random-access memories), EPROM (erasable programmable read-only memories) and full-feature and flash EEPROM (electrically erasable programmable read-only memories). The reliability problems specific to the above mentioned memory types are also discussed. Finally the different approaches and technologies are compared in terms of their density, speed performance, applications, market and long term trends.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/0026269289901225; http://dx.doi.org/10.1016/0026-2692(89)90122-5; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4243071409&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/0026269289901225; http://dx.doi.org/10.1016/0026-2692%2889%2990122-5; https://dx.doi.org/10.1016/0026-2692%2889%2990122-5
Elsevier BV
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