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Coverage measurements of the Si(100)2 × 1:Cs and Si(100)2 × 1:K surfaces: resolution of structural models

Surface Science, ISSN: 0039-6028, Vol: 243, Issue: 1, Page: L37-L40
1991
  • 74
    Citations
  • 0
    Usage
  • 1
    Captures
  • 0
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    74
    • Citation Indexes
      74
  • Captures
    1

Article Description

In this study, medium energy ion scattering has been used in conjunction with Auger electron spectroscopy and LEED to measure the saturation coverage of Cs and K on Si(100) at room temperature, for which distinct 2 × 1 surface structures are observed. Defining one monolayer as the density of Si in a single (100) crystal plane (6.78 × 1014atomscm2), the overlayer coverages in these systems are 0.97 ± 0.05 ML for Si(100)2 × 1:Cs and 0.98 ± 0.05 ML for Si(100)2 × 1:K. These results clearly discriminate between proposed models containing 0.5 and 1.0 ML alkali coverage for the saturated surface.

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