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Laser reactive ablation deposition of titanium carbide films

Thin Solid Films, ISSN: 0040-6090, Vol: 258, Issue: 1, Page: 40-45
1995
  • 24
    Citations
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    Usage
  • 12
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    24
    • Citation Indexes
      24
  • Captures
    12

Article Description

Titanium carbide films were deposited on silicon wafers by XeCl (308 nm) excimer laser ablation of titanium in low pressure (10 −3 mbar) methane atmosphere. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J cm −2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectrometry).

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