Magnetoresistance of spin glass NiMn/Ni thin film
Journal of Magnetism and Magnetic Materials, ISSN: 0304-8853, Vol: 113, Issue: 1, Page: 115-118
1992
- 5Citations
- 1Captures
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Article Description
We report magnetoresistance measurements on Ni 1−x Mn x /SiO 2 /Ni ( x = 0.27, 0.28) films with various thickness of SiO 2 layer as a function of field and temperature. In the temperature dependence of the magnetoresistance, we observed that the temperature T f at which the disagreement between field cooled and zero field cooled data appears increased with decreasing thickness of SiO 2 layer. T f was higher than that of Ni 73 Mn 27 film. This result suggests that the spin glass transition temperature T g increased with decreasing thickness of SiO 2 layer. The increase of T g can be interpreted by magnetic interaction between magnetic moments in NiMn and Ni layers via conduction electrons leaking through the SiO 2 layer.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/030488539291255R; http://dx.doi.org/10.1016/0304-8853(92)91255-r; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0027109098&origin=inward; http://linkinghub.elsevier.com/retrieve/pii/030488539291255R; http://api.elsevier.com/content/article/PII:030488539291255R?httpAccept=text/xml; http://api.elsevier.com/content/article/PII:030488539291255R?httpAccept=text/plain; https://linkinghub.elsevier.com/retrieve/pii/030488539291255R; http://dx.doi.org/10.1016/0304-8853%2892%2991255-r; https://dx.doi.org/10.1016/0304-8853%2892%2991255-r
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