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Magnetoresistance of spin glass NiMn/Ni thin film

Journal of Magnetism and Magnetic Materials, ISSN: 0304-8853, Vol: 113, Issue: 1, Page: 115-118
1992
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We report magnetoresistance measurements on Ni 1−x Mn x /SiO 2 /Ni ( x = 0.27, 0.28) films with various thickness of SiO 2 layer as a function of field and temperature. In the temperature dependence of the magnetoresistance, we observed that the temperature T f at which the disagreement between field cooled and zero field cooled data appears increased with decreasing thickness of SiO 2 layer. T f was higher than that of Ni 73 Mn 27 film. This result suggests that the spin glass transition temperature T g increased with decreasing thickness of SiO 2 layer. The increase of T g can be interpreted by magnetic interaction between magnetic moments in NiMn and Ni layers via conduction electrons leaking through the SiO 2 layer.

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