Intermixing at the early stage of the Si(111)/Ag interface growth
Applications of Surface Science, ISSN: 0378-5963, Vol: 11, Issue: C, Page: 348-354
1982
- 25Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations25
- Citation Indexes25
- CrossRef25
- 22
Article Description
A synchrotron radiation (SR) photoemission investigation of the Si(111) cleaved surface+Ag thin overlayers (0.25–2.5 monolayers (ML) has been carried out at room temperature with the Cooper minimum method and at liquid nitrogen temperature (LNT) for a critical coverage (0.5 ML) with the energy dependent escape depth method. The two experiments give independent evidences of intermixing, following chemical reaction, between Ag and Si at the very low coverages, indicating that the very early stage of the Si(111)/Ag junction is not a sharp interface but an intermixed region extended to at least two layers of material.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/0378596382900812; http://dx.doi.org/10.1016/0378-5963(82)90081-2; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0345411621&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/0378596382900812; https://api.elsevier.com/content/article/PII:0378596382900812?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:0378596382900812?httpAccept=text/plain; http://dx.doi.org/10.1016/0378-5963%2882%2990081-2; https://dx.doi.org/10.1016/0378-5963%2882%2990081-2
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